Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6241572
Kind Code:
B2
Abstract:
Supposing x is defined as a position of an end of a depletion layer extending when a rated voltage V [V] is applied to a rear surface electrode, W1 is defined as a distance between the position x and an outer peripheral edge of a surface electrode in an outer peripheral direction, W2 is defined as a distance between the position x and an outer peripheral edge of a field insulating film in the outer peripheral direction, t [μm] is defined as a film thickness t [μm] of the field insulating film, a layout of a terminal part is defined so that an electrical field in the field insulating film at the position x expressed as W2V/t(W1+W2) is 3 MV/cm or smaller.
Inventors:
Kohei Ebihara
Hiroshi Watanabe
Hiroshi Watanabe
Application Number:
JP2017512488A
Publication Date:
December 06, 2017
Filing Date:
April 14, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/872; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP2015046500A | ||||
| JP2014207444A | ||||
| JP2010034306A | ||||
| JP2013098316A |
Attorney, Agent or Firm:
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka
Kenro Date
Shigeaki Matsui
Kuratani Yasutaka
Kenro Date
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