Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6268366
Kind Code:
B2
Abstract:
An object is to achieve an increase in gain by reducing a current collapse, and reducing Cgd and Rg. A semiconductor device according to the present invention includes a substrate; a first semiconductor layer disposed on the substrate and made of a Group III nitride semiconductor; a second semiconductor layer disposed on the first semiconductor layer and made of a Group III nitride semiconductor; a gate electrode, a source electrode, and a drain electrode disposed on the second semiconductor layer; a first field plate electrode disposed on the second semiconductor layer; and a second field plate electrode disposed on the first field plate electrode, in which the first field plate electrode and the second field plate electrode are disposed between the gate electrode and the drain electrode.
Inventors:
Ryo Kajitani
Tetsuzo Ueda
Yoshiharu Akita
Tsurumi Naodai
Nakazawa Toshishi
Tetsuzo Ueda
Yoshiharu Akita
Tsurumi Naodai
Nakazawa Toshishi
Application Number:
JP2014538161A
Publication Date:
January 31, 2018
Filing Date:
September 20, 2013
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/338; H01L29/06; H01L29/41; H01L29/778; H01L29/812
Domestic Patent References:
| JP2007537594A | ||||
| JP2008124440A | ||||
| JP2010182829A | ||||
| JP2012028423A |
Attorney, Agent or Firm:
Kenji Kamada
Hiroo Maeda
Hiroo Maeda
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