Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6328735
Kind Code:
B2
Abstract:
An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured.
Inventors:
Noda Kosei
Application Number:
JP2016234127A
Publication Date:
May 23, 2018
Filing Date:
December 01, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; H01L29/786
Domestic Patent References:
| JP2009528670A | ||||
| JP2010103340A | ||||
| JP2010073683A | ||||
| JP2008040343A | ||||
| JP2010087303A |
Foreign References:
| US20070278490 | ||||
| US20080102587 | ||||
| US20100102312 | ||||
| WO2008126729A1 | ||||
| US20100044702 | ||||
| US20080296568 | ||||
| US20080035920 |