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Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6339230
Kind Code:
B2
Abstract:
A semiconductor device includes a pillar-shaped semiconductor layer formed on a substrate; a first insulator surrounding the pillar-shaped semiconductor layer; a first gate surrounding the first insulator and made of a metal having a first work function; a second gate surrounding the first insulator and made of a metal having a second work function different from the first work function, the second gate being located below the first gate; a third gate surrounding the first insulator and made of a metal having the first work function, the third gate being located below the second gate; and a fourth gate surrounding the first insulator and made of a metal having the second work function different from the first work function, the fourth gate being located below the third gate. The first gate, the second gate, the third gate, and the fourth gate are electrically connected together.

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Inventors:
Fujio Masuoka
Hiroki Nakamura
Application Number:
JP2016563006A
Publication Date:
June 06, 2018
Filing Date:
October 09, 2015
Export Citation:
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Assignee:
Unisantis Electronics Singapore Pte Ltd.
International Classes:
H01L21/336; H01L21/28; H01L29/41; H01L29/423; H01L29/49; H01L29/78; H01L29/786
Domestic Patent References:
JP2008172164A
JP2005229101A
JP2006269520A
Foreign References:
US20080251825
Attorney, Agent or Firm:
Takaki Nishijima
Shinichiro Tanaka
Fumiaki Otsuka
Hiroyuki Suda
Hiroshi Uesugi



 
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