Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6340190
Kind Code:
B2
Abstract:
A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is TS1 and the thickness of the second region is TG1, TS1≥TG1.
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Inventors:
Daisuke Matsubayashi
Shinohara Satoshi
Sekine
Shinohara Satoshi
Sekine
Application Number:
JP2013246931A
Publication Date:
June 06, 2018
Filing Date:
November 29, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/28; H01L21/8234; H01L21/8242; H01L27/088; H01L27/10; H01L27/108; H01L29/417; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2011243745A | ||||
| JP2012039102A | ||||
| JP2004304167A | ||||
| JP2011124360A | ||||
| JP2012199528A | ||||
| JP2010157702A |