Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6355481
Kind Code:
B2
Inventors:
Yoshihisa Yasuki
Ryoji Matsuda
Ryoji Matsuda
Application Number:
JP2014170420A
Publication Date:
July 11, 2018
Filing Date:
August 25, 2014
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L29/861; H01L21/329; H01L21/822; H01L21/8222; H01L27/04; H01L27/06; H01L29/868; H01L29/87
Domestic Patent References:
| JP2005347463A | ||||
| JP10074958A | ||||
| JP8330605A | ||||
| JP2003068870A |
Foreign References:
| US20040135141 |
Attorney, Agent or Firm:
Fukami patent office
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