Title:
半導体装置
Document Type and Number:
Japanese Patent JP6405413
Kind Code:
B2
Abstract:
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
Inventors:
Shunpei Yamazaki
Junichiro Sakata
Jun Koyama
Junichiro Sakata
Jun Koyama
Application Number:
JP2017109098A
Publication Date:
October 17, 2018
Filing Date:
June 01, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/8234; H01L21/8236; H01L27/06; H01L27/088; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
| JP2008199005A | ||||
| JP2008042088A | ||||
| JP2008310312A | ||||
| JP2008276211A |
Foreign References:
| US20080296568 | ||||
| US20080315193 | ||||
| US20080318368 | ||||
| US20080176364 | ||||
| US20080128689 |