Title:
半導体装置
Document Type and Number:
Japanese Patent JP6455335
Kind Code:
B2
Abstract:
An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.
Inventors:
Shinkuni Akihiko
Hirofumi Oki
Yoshifumi Tomomatsu
Hirofumi Oki
Yoshifumi Tomomatsu
Application Number:
JP2015125832A
Publication Date:
January 23, 2019
Filing Date:
June 23, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/28; H01L21/329; H01L29/06; H01L29/12; H01L29/739; H01L29/74; H01L29/78; H01L29/861; H01L29/868
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Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno