Title:
半導体デバイス
Document Type and Number:
Japanese Patent JP6748512
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device having an etching stop layer capable of easily grasping variations in emission intensity of plasma when performing dry-etching of a layer to be etched, and also to provide a method for forming an etching stop layer.SOLUTION: Disclosed is a semiconductor device SD having a laminate structure between an etching stop layer Ls and a layer Le to be etched. The etching stop layer Ls is made of an aluminum oxide film containing Mg or B. It is preferable that the etching stop layer Ls is formed by MgAlxOy film.SELECTED DRAWING: Figure 1
Inventors:
Yoshiji Fujii
Shinya Nakamura
Shinya Nakamura
Application Number:
JP2016155395A
Publication Date:
September 02, 2020
Filing Date:
August 08, 2016
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
H01L21/3065; H01L21/316
Domestic Patent References:
| JP62265724A | ||||
| JP2015153941A | ||||
| JP2010529295A | ||||
| JP2013502724A |
Attorney, Agent or Firm:
Seiryu Corporation