Title:
半導体装置
Document Type and Number:
Japanese Patent JP6783708
Kind Code:
B2
Abstract:
A semiconductor device according to one embodiment includes: a semiconductor substrate (SUB) having a first surface (FS) and a second surface (SS) which is an opposite surface of the first surface; a first wiring (WL1) and a second wiring (WL2) disposed on the first surface; a first conductive film (FCL) electrically connected to the first wiring; and a gate electrode (GE). The semiconductor substrate has a source region (SR), a drain region (DRA), a drift region (DRI), and a body region (BR). The drift region is disposed so as to surround the body region in a plan view. The first wiring has a first portion disposed so as to extend across a boundary between the drift region and the body region in a plan view, and electrically connected to the drift region. The second wiring is electrically connected to the source region. The first conductive film is insulated from and faces the second wiring.
Inventors:
Hiroyoshi Kudo
Toku Satoru Ta
Satoshi Uchiya
Toku Satoru Ta
Satoshi Uchiya
Application Number:
JP2017117572A
Publication Date:
November 11, 2020
Filing Date:
June 15, 2017
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L29/78; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/06
Domestic Patent References:
| JP2016131183A | ||||
| JP2009260271A | ||||
| JP2004022644A | ||||
| JP2014523649A | ||||
| JP2009510725A | ||||
| JP2003526948A | ||||
| JP2012244071A |
Attorney, Agent or Firm:
Fukami patent office