Title:
半導体装置
Document Type and Number:
Japanese Patent JP6878228
Kind Code:
B2
Abstract:
According to an embodiment, a semiconductor device includes a plurality of first interconnections, a plurality of gate dielectric films, and a plurality of second interconnections. The plurality of first interconnections are oxide semiconductors formed in parallel at predetermined intervals in a first direction. The plurality of gate dielectric films are formed on surfaces of the first interconnections, respectively. The plurality of second interconnections are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films.
Inventors:
Kosuke Tatsumura
Keiji Ikeda
Tsutomu Tezuka
Keiji Ikeda
Tsutomu Tezuka
Application Number:
JP2017180714A
Publication Date:
May 26, 2021
Filing Date:
September 20, 2017
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/10; G11C19/28; H01L29/786
Domestic Patent References:
| JP2016171321A | ||||
| JP58130499A | ||||
| JP2012142048A | ||||
| JP2015215937A | ||||
| JP52090237A |
Foreign References:
| US20130069052 |
Attorney, Agent or Firm:
Sakai International Patent Office