Title:
半導体装置
Document Type and Number:
Japanese Patent JP6987188
Kind Code:
B2
Abstract:
To provide a semiconductor device in which the manufacturing cost is low and the manufacturing yield is improved.SOLUTION: A semiconductor device includes a transistor element and a capacitor element. The transistor element and the capacitor element each include an oxide semiconductor layer, a gate electrode layer, a gate insulating layer, and an insulating layer covering the oxide semiconductor layer, the gate insulating layer, and a gate electrode. The capacitor element includes a first terminal connected to the oxide semiconductor layer, and a second terminal connected to the gate electrode layer. The oxide semiconductor layer of the capacitor element includes a first region overlapping with the gate electrode layer in a plan view, and a second region exposed from the gate electrode layer in the plan view. The resistance of the oxide semiconductor layer in the second region is lower than the resistance of the oxide semiconductor layer in the first region. Oxygen deficiencies included in the oxide semiconductor layer in the second region are more than oxide deficiencies included in the oxide semiconductor layer in the first region.SELECTED DRAWING: Figure 2
Inventors:
Toshige Sasaki
Hiroshi Tabata
Hiroshi Tabata
Application Number:
JP2020121289A
Publication Date:
December 22, 2021
Filing Date:
July 15, 2020
Export Citation:
Assignee:
Japan Display Co., Ltd.
International Classes:
H01L21/822; H01L21/336; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H01L51/50
Domestic Patent References:
| JP2014143425A | ||||
| JP2015181151A | ||||
| JP10041403A | ||||
| JP2010156963A | ||||
| JP2015108731A |
Foreign References:
| US20150221774 |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners
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