Title:
半導体装置
Document Type and Number:
Japanese Patent JP7018490
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
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Inventors:
Sanpei Yamazaki
Jun Oyama
Kiyoshi Kato
Jun Oyama
Kiyoshi Kato
Application Number:
JP2020143225A
Publication Date:
February 10, 2022
Filing Date:
August 27, 2020
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L27/1156; H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2008216529A | ||||
| JP2006066489A | ||||
| JP62274773A | ||||
| JP2002368226A | ||||
| JP2007027393A | ||||
| JP2009094492A |