Title:
半導体装置
Document Type and Number:
Japanese Patent JP7038778
Kind Code:
B2
Abstract:
A semiconductor device includes a first transistor disposed in a first region of a semiconductor layer and a second transistor disposed in a second region of the semiconductor layer, and includes, on the surface of the semiconductor layer, first source pads, a first gate pad, second source pads, and a second gate pad. In the plan view of the semiconductor layer, the first and second transistors are aligned in a first direction; the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a side parallel to the first direction and located closest to the first gate pad; and the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a side parallel to the first direction and located closest to the second gate pad.
Inventors:
Ryosuke Okawa
Toshikazu Imai
Kazuma Yoshida
Inoue Tsubasa
Takeshi Imamura
Toshikazu Imai
Kazuma Yoshida
Inoue Tsubasa
Takeshi Imamura
Application Number:
JP2020168449A
Publication Date:
March 18, 2022
Filing Date:
October 05, 2020
Export Citation:
Assignee:
Nuvoton Technology Japan Corporation
International Classes:
H01L29/78; H01L21/329; H01L23/12; H01L25/07; H01L25/18; H01L29/866
Domestic Patent References:
| JP2016086006A | ||||
| JP2015095550A | ||||
| JP2013247309A |
Foreign References:
| WO2018123799A1 | ||||
| US20060263988 |
Attorney, Agent or Firm:
Hiroi Arai
Teraya Eisaku
Shinichi Michizaka
Teraya Eisaku
Shinichi Michizaka