Title:
半導体装置
Document Type and Number:
Japanese Patent JP7066818
Kind Code:
B2
Abstract:
A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
Inventors:
Sanpei Yamazaki
Masayuki Sakakura
Junichiro Sakata
Masashi Tsubuki
Kengo Akimoto
Miyuki Hosoba
Kin Satoshi Oikawa
Masayuki Sakakura
Junichiro Sakata
Masashi Tsubuki
Kengo Akimoto
Miyuki Hosoba
Kin Satoshi Oikawa
Application Number:
JP2020210031A
Publication Date:
May 13, 2022
Filing Date:
December 18, 2020
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; H01L21/8234; H01L27/088; H01L29/786
Domestic Patent References:
| JP2009141002A | ||||
| JP200293705A | ||||
| JP1164889A |
Foreign References:
| US20070172591 |
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