PURPOSE: To prevent punchthrough of aluminum used for wirings to an active region side and precipitation of silicon by providing high melting point metal used at the time of forming of metal electrodes in a contact opening.

CONSTITUTION: A silicon oxide film 2, a polycrystalline silicon 3 are formed on a silicon substrate 1, and a pattern of the silicon 3 is formed on a part which becomes a metal electrode 5. Then, with the pattern of the silicon 3 as a mask an active region 6 is formed, the film 2 of a contact region 8 is removed, high melting point metal 4 is deposited, and the metal 4 is electrically conducted with the region 6. Then, the pattern of the metal 4 is formed only on the silicon 3 and the region 8. Thus, the metal 4 used for the electrode 5 is also provided on the region 8 to suppress the influences of punchthrough of aluminum used for wirings 9 and precipitation of silicon upon miniaturization.