Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH03235378
Kind Code:
A
Abstract:
PURPOSE:To form a p type layer of high carrier concentration by adding a III group element and IV group element in the substantially same concentration to a II-VI group semiconductor. CONSTITUTION:A P-ZnSe layer 12 is deposited on a p-GaAs substrate 11 by cracking a mixture of methane gas and diboron gas as a p type impurity by plasma discharge to lead the product into a mass isolating device and then doping III-IV group boron carbon ions only. Next, an n-ZnSe layer 13 is deposited by doping Ce ions using chlorine gas. Through these procedures, III group element and IV group element in almost equal concentration are added to II-VI group semiconductor so that the self compensation effect may be weakened even if the impurity is added to enhance the activating ratio of an acceptor for increasing the carrier concentration of the p type layer thereby enabling an LED in high efficiency to be manufactured.
Inventors:
UEMOTO TSUTOMU
MOGI NAOTO
MOGI NAOTO
Application Number:
JP3214590A
Publication Date:
October 21, 1991
Filing Date:
February 13, 1990
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L33/28; H01L33/30; H01L33/40; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Norio Ohu
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