Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05226715
Kind Code:
A
Abstract:
PURPOSE:To prevent the degeneration or diffusion of the composition of a ferroelectric by providing an electrode layer and a ferroelectric layer on a semiconductor substrate, and also, equipping a metallic oxide layer between the electrode layer and the ferroelectric film. CONSTITUTION:An electrode layer 2 is made on the surface of a semiconductor substrate 1, and a metallic oxide layer 3 is made on the surface, and a ferroelectric film 4 is made on the surface. The thickness of the metallic oxide layer 3 is preferably about several 10nm. Moreover, for the metallic oxide layer 3, an oxide layer such as Ba, Sr, etc., is used. The ferroelectric film 4 is PbTiO3, Pb(ZrTi)O3, (PbLa), (ZrTi)O3, etc.
Inventors:
UEDA ICHIRO
KUGIMIYA KOICHI
KUGIMIYA KOICHI
Application Number:
JP3072692A
Publication Date:
September 03, 1993
Filing Date:
February 18, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L37/02; H01L41/02; (IPC1-7): H01L37/02; H01L41/02
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)