Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0555499
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor atomic cell that realizes microminiaturization and versatility of a semiconductor device.
CONSTITUTION: A heat generator 11 is formed in a silicon substrate 1. Heat from the heat generator is transferred through a very thin insulating film 12 to a heat sensor 13 and outputted as a voltage signal from a thermoelectric device 14. This structure facilitates fabrication of a microminiature semiconductor device as well as a many-value logic circuit.
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Inventors:
TAKAHASHI TAKETO
TANINA OSAMU
TANINA OSAMU
Application Number:
JP24526991A
Publication Date:
March 05, 1993
Filing Date:
August 28, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822; H01L27/10; H01L37/00; (IPC1-7): H01L27/04; H01L27/10; H01L37/00
Attorney, Agent or Firm:
Kenichi Hayase
Next Patent: SEMICONDUCTOR MEMORY AND MANUFACTURE THEREOF