PURPOSE: To prevent generation of noise and to improve a gradation by forming a photoelectric conversion layer and a semiconductor active layer of the same material, simultaneously coating with the layers to be formed, and separating the conversion layer and the active layer from each other.

CONSTITUTION: A photoelectric converter P is formed by forming a lower electrode 11, a photoelectric conversion layer 20a formed by sequentially forming a p+ type hydrogenated amorphous silicon layer 21a, an intrinsic hydrogenated amorphous silicon layer 22a and an n+ type hydrogenated amorphous silicon layer 23a, and an upper electrode 31 on an insulating board 100. A thin film transistor T is formed by forming a pair of ohmic contact layers 23a, 23b, a source electrode S and a drain electrode D on the layer 22b and forming a gate electrode 52 on an insulating film 40. The layer 20a and a semiconductor layer 20b of the converter P and the transistor T are so insularly formed as to be separated from each other. Since the semiconductor layers are isolated, generation of a parasitic transistor is prevented to improve its S/N ratio.