Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0669331
Kind Code:
A
Abstract:
PURPOSE: To restrain decline in the breakdown voltage of the elements without thickening an oxide film under the wiring.
CONSTITUTION: An element is formed on a dielectric isolation substrate 6. Namely, in addition to a p-region 9 as an anode, an n+-region 10 as a cathode of a diode and their electrodes 11 and 12, an n-region (impurity region) 8 is formed under a wiring (the electrode 11) of the anode in a single crystal landar region 7 formed by polishing a silicon single crystal wafer. By such a constitution, the electric field is dispersed in the part of the n-region 8, so that decline in breakdown voltage caused by the concentration of the electric field owing to the wiring (the electrode 11) can be restrained low.
Inventors:
KAMI HIRONORI
TERASAWA TOMIZO
OGAWA MASANOBU
MATSUMOTO TATSUHIKO
TERASAWA TOMIZO
OGAWA MASANOBU
MATSUMOTO TATSUHIKO
Application Number:
JP21593192A
Publication Date:
March 11, 1994
Filing Date:
August 13, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01L21/762; H01L21/76; H01L29/861; (IPC1-7): H01L21/76; H01L29/91
Attorney, Agent or Firm:
Ishida Chochichi (2 outside)
Next Patent: コンバイン等の操作装置