Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH07263574
Kind Code:
A
Abstract:
PURPOSE: To provide the structure of a semiconductor device which can suppress the generation of a leakage current in the case of using a tantalum oxide film for a dielectric film and also a method for manufacturing it.
CONSTITUTION: A silicon oxide film 22 is formed on a silicon substrate 21 and a polysilicon film 23a is formed for a lower electrode in a part thereof, and a silicon nitride film 24, a tantalum oxide film 25, a molybdenum oxide film 26 and molybdenum film 27 for an upper electrode are formed in sequence so as to cover the polysilicon film 23a.
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Inventors:
HISAWA KAZUYA
MATSUHASHI HIDEAKI
MATSUHASHI HIDEAKI
Application Number:
JP5400094A
Publication Date:
October 13, 1995
Filing Date:
March 24, 1994
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L27/04; H01L21/336; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; H01L29/78; (IPC1-7): H01L21/8242; H01L27/108; H01L27/04; H01L21/822; H01L29/78; H01L21/336
Attorney, Agent or Firm:
Toshiaki Suzuki