Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH07263658
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device in which a failure due to high electrical resistance in a wiring diffusion layer can be eliminated.
CONSTITUTION: A multi-layered wire semiconductor device is formed by making a groove 18 in a wiring diffusion layer 7 and burying a high melting-point metal 16 therein, so that the electrical resistance of the wiring diffusion layer may be suppressed. Therefore the width of the wiring diffusion layer can be made smaller and a pellet can also be made compact.
Inventors:
FUJIMOTO TAKATOSHI
Application Number:
JP5144694A
Publication Date:
October 13, 1995
Filing Date:
March 23, 1994
Export Citation:
Assignee:
KANSAI NIPPON ELECTRIC
International Classes:
H01L29/41; H01L21/28; H01L21/768; H01L23/522; H01L29/43; (IPC1-7): H01L29/41; H01L21/768; H01L29/43