PURPOSE: To provide a semiconductor device having a resin layer excellent in adhesion, humidity resistance, heat resistance, etc., and capable of resisting to especially strong hydrofluoric acid etchant by forming a specified polyimide resin layer on the surface of a semiconductor element under specified conditions.

CONSTITUTION: This device is provided by forming a polyimide resin layer prepared by heating for curing a polyamic acid mixture which is prepared by mixing a solution (A) of a polyamic acid obtained by reacting 3,3',4,4'- biphenyltetracarboxylic dianhydride with p-phenylenediamine with a solution (B) of a polyamic acid obtained by reacting pyromellitic dianhydride with 4,4'- diaminodiphenyl ether and in which a diaminosiloxane represented by the formula (wherein R1 and R2 are each a bivalent organic group; R3 to R6 are each a hydrocarbon group, and (n) is 0-12) constitutes 1-30mol% of the diamine components A and/or B, and the content of component B is 20-50wt.% based on the total weight of the polyamic acids, on the surface of a semiconductor device directly or through another insulation layer.