PURPOSE: To obtain a semiconductor device using an electrode material which has low specific resistance, a thermal expansion coefficient approximately equal to that of Si, does not react with Si thereby to produce no compounds, has excellent adhesion and is produced at low cost.
CONSTITUTION: An n+-type semiconductor region 17 to serve as a channel region is formed inside the upper main surface of a semiconductor layer 12, and a lower electrode 16 of LaB6 is formed in contact with the surface of the n+-type semiconductor region 17 of Si. Also, from the surface of the lower electrode 16 of LaB6 to the surface of an element isolation oxide layer 13, a high dielectric oxide layer 15 is provided. Further, a TiN layer 14 is formed to cover the high dielectric oxide layer 15. Consequently, a semiconductor device having a low specific resistance of a first electrode with a good interface between the first electrode and the dielectric oxide layer, which prevents separation of the first electrode and the dielectric oxide layer, is obtained.
FURUKAWA AKIHIKO
TAKAMI TETSUYA
OISHI TOSHIYUKI
WADA YUKIHIKO
KURODA KENICHI
KOJIMA KAZUYOSHI
SAKAEMORI TAKAHISA
