SEMICONDUCTOR DEVICE

Japanese Patent JPH09172174

A

PROBLEM TO BE SOLVED: To provide a protective device with respect to static discharge, by causing the width of a current path to be greater than the length of the current path by several times or more, extending a contact portion in parallel to the current path, and separating the contact portion from the current path at a distance equal to or greater than twice the length of the current path. SOLUTION: This protection circuit is characterized by setting of the channel width of a transistor 13 and the distance A extending from an end portion 25 of the channel to a metal-silicon contact portion 26 coupling a drain 12 with a metal conductor 11. A preferred example of numerical value representing the ratio of the channel length to the channel width W is preferably about 25 or greater. By this setting, conduction of a large instantaneous current spike is enabled under a minute forward voltage. A preferred example of numerical value representing the ratio of the distance A to the channel length is about two or greater. By this setting of the distance A, the protection level with respect to static discharge may by improved at least twice or three times. Thus, an input/output protective device for MOS device which may endure static discharge of 3000V or more may be provided.

JP2003209922	SWITCHING APPARATUS
JP6609378	Circuit protection system and protection method between batteries using freewheel path

ROBAATO ENU RAUNTORII
TOROI EICHI HAANDON

JP24820396A

June 30, 1997

September 19, 1996

Click for automatic bibliography generation  

TEXAS INSTRUMENTS INC

H02H7/20; G05F3/24; H01L21/822; H01L21/8234; H01L27/02; H01L27/04; H01L27/06; H01L27/088; H01L29/10; H01L29/423; H01L29/78; H03H1/00; (IPC1-7): H01L29/78; H01L21/822; H01L21/8234; H01L27/04; H01L27/088

JPS6144471A

1986-03-04

Akira Asamura (2 outside)

Previous Patent: FABRICATION OF SEMICONDUCTOR DEVICE

Next Patent: TERMINATION STRUCTURE OF SEMICONDUCTOR DEVICE AND ITS MANUFACTURE