To obtain a semiconductor device having electrodes arranged neatly at the positions symmetric to a first diaphragm on the upper surface of an element board on the outside of the first diaphragm.

An element board 2 is provided, in the lower surface thereof, with a first recess 3 having a first circular diaphragm 1 constituting the ceiling part thereof composed of a laminated insulating film 4 of an oxide and a nitride. An infrared detection element 5 is formed on the upper surface of first diaphragm 1. Two electrodes 6 are disposed symmetrically to the center of first diaphragm 1 on the upper surface of element board 2 on the outside of first diaphragm 1. On the other hand, a second recess 10 is made in the lower surface of a sealing board 9 and a second diaphragm 8 is formed at the ceiling part of second recess 10. The sealing board 9 is bonded onto the element board 2 so that the second recess 10 may cover the element 5, thus forming a cavity structure.