SEMICONDUCTOR DEVICE

Japanese Patent JPH1032199

A

To enhance the characteristics of a semiconductor device by the water permeability and moisture-absorption characteristics of an insulative silicon film by a method, wherein the Raman-scattering spectrum of the insulative silicon film has a maximal value of a scattering intensity in the extent of a specified wave number and a value normalized the peak area of the scattering intensity by a scattering intensity in a specified wave number is set at a specified value or lower.

In a semiconductor device, having an insulative silicon film containing at least the oxygen out of oxygen and nitrogen, the Raman-scattering spectrum of the silicon film has a maximal value of a scattering intensity in the range of a wave number 600 to 610cm-1 and a value normalized the peak area of the scattering intensity in this extent by a scattering intensity in a wave number of 440cm-1 is set in 3 or lower. Moreover, an Si-H bond concentration in the insulating silicon film is set in a concentration of 1×1020cm-3 or lower or the silicon film is formed by a CVD method. Thereby, moisture absorption of the silicon film or penetration of water in the silicon film into the layer under the silicon film and diffusion of the water in the layer can be inhibited.

JPS6143478	MANUFACTURE OF SEMICONDUCTOR DEVICE
JP3875345	NON-VOLATILE SEMICONDUCTOR MEMORY
JP2009010326	METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

TANAKA MIWA
NAKADA RENPEI
HAYASAKA NOBUO

JP18746196A

February 03, 1998

July 17, 1996

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TOSHIBA CORP

H01L21/8247; H01L21/316; H01L21/768; H01L23/522; H01L27/115; H01L29/78; H01L29/788; H01L29/792; (IPC1-7): H01L21/316; H01L21/768; H01L27/115; H01L29/78; H01L21/8247; H01L29/788; H01L29/792

Takehiko Suzue (6 outside)

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