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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS51116684
Kind Code:
A
Abstract:

PURPOSE: To improve the emitter efficiency of a lateral structure transistor by providing no buried layer of low resistance beneath a bipolar type semiconductor device's second area of the reverse conductivity.


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Inventors:
MORI AKISUKE
MAKABE KUNIAKI
OONO SATOSHI
Application Number:
JP4082375A
Publication Date:
October 14, 1976
Filing Date:
April 05, 1975
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H01L27/082; H01L21/8226; H01L27/02; (IPC1-7): H01L27/04; H03K19/08



 
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