Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5275990
Kind Code:
A
Abstract:
PURPOSE: To obtain an IC of reduced ineffective current and increased current amplification factor by forming an N+ type bump under a P type injector region and approximating its top to the injection region, in a lateral transistor.
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Inventors:
INOUE OSAMU
Application Number:
JP15305075A
Publication Date:
June 25, 1977
Filing Date:
December 20, 1975
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L27/082; H01L21/331; H01L21/8226; H01L27/02; H01L29/73; (IPC1-7): H01L27/04; H01L29/08; H03K19/08