Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5388587
Kind Code:
A
Abstract:
PURPOSE:To obtain a high wiring coupling capacity of high reliability without having hygroscopicity by using a metal silicide and its oxide in place of polycrystalline Si.
Inventors:
MOCHIZUKI TOORU
SHIBATA KENJI
SHIBATA KENJI
Application Number:
JP247777A
Publication Date:
August 04, 1978
Filing Date:
January 14, 1977
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L23/522; H01B1/00; H01B1/16; H01L21/283; H01L21/768; (IPC1-7): H01B1/00; H01L21/88