Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS55154744
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor device which has no disconnection by forming two recesses on an Si semiconductor substrate, coating monocrystalline Si layer through SiO2 on the surface of the recesses and insulating to isolate semiconductor elements therebetween with the respective monocrystalline layers. CONSTITUTION:The surface (100) of an N-type Si substrate 31 is anisotropically etched through the openings of an SiO2 film 61 to form recesses 32' and 33', O2 ion is implanted to the recesses to form SiO2 layers 34 and 35 in the recesses of the substrate 31 to isolate elements therebetween. Then, single type monocrystalline layers 62 and 63 are formed on the recesses and a polysilicon layer 64 is formed on the film 61 by a vapor phase growing process. Thereafter, the film 61 is exposed by etching to selectively form N<+>-type layers 39, 41, a P-type layer 40 and P<+>-type layers 42, 44 and an N-type layer 43 in the monocrystalline layer. An SiO2 film 65 is coated thereon, selectively perforated with openings, and electrodes are attached therethrough. According to this configuration, the surface is flat and no disconnection is accordingly taken place.
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Inventors:
AKITANI MASAHIRO
OOWADA KUNIKI
OOWADA KUNIKI
Application Number:
JP6244679A
Publication Date:
December 02, 1980
Filing Date:
May 21, 1979
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L27/00; H01L21/02; H01L21/265; H01L21/316; H01L21/762; H01L27/08; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/265; H01L21/94; H01L29/78
Domestic Patent References:
| JPS5245275A | 1977-04-09 |