Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5670677
Kind Code:
A
Abstract:
PURPOSE:To obtain excellent ohmic contact by forming ohmic electrodes consisting of an Au group material containing Te on an N type layer. CONSTITUTION:An N type Ca0.4Al0.6As layer 2 to which N type impurites in 5X10<17>cm<-3> are added is made up on a P type GaAs substratge 1. Electrodes 3 are built up on the N type layer 2. The electrodes 3 are composed of components by which a very small amount of Te is added to an electrode material, the principal ingredient thereof is Au. For example, a material by which 2-4wt% Te is added to an AuGe alloy is formed in electrode regions, Ni is made up on an AuGeTe layer for preventing cohesion, and Au is further evaporated for improving an adhesive property of a lead wire. The electrodes 3 are thermally treated, and alloyed.
Inventors:
MURATA KAZUHISA
HAYASHI HIROSHI
TAKENAKA TAKUO
HAYASHI HIROSHI
TAKENAKA TAKUO
Application Number:
JP14814579A
Publication Date:
June 12, 1981
Filing Date:
November 14, 1979
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/28; H01L29/43; H01L33/30; H01L33/40; H01S5/00; (IPC1-7): H01L21/285; H01L33/00; H01S3/18