Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5737856
Kind Code:
A
Abstract:
PURPOSE:To obtain an electrode-wiring stable at a high temperature by forming an opening to an insulating film on a substrate to which an element is shaped previously and laminating poly-Si, heat resistant metal and its silicide on the insulating film from the surface of the substrate in said order. CONSTITUTION:The opening is formed on SiO2 on the Si substrate 1 to which the element is shaped previously, and the doped poly-Si 8 and the Mo 9 are stacked. The mutual adhesive force of the layers 2-8-9 is extremely excellent. The Mo 9 is coated with the MoSi2 10 through sputtering. The MoSi2 prevents the loss of the Mo due to sublimation because it is extremely stable at a high temperature and does not sublime. The surface, etc. are etched by reactive ions by using CF4 and PCl3, and the surface is coated with PSG4. The PSG is opened, and a corner section is melted at a high temperature. The Mo does not sublime at that time. The surface is coated with Al wiring 5 and a PSG protective film 6 through a normal method. W, Ta, etc. can be employed besides Mo, and the electrode-wiring stable at the high temperature are obtained according to this constitution.
Inventors:
KASHIWAGI SHIGEO
Application Number:
JP11418680A
Publication Date:
March 02, 1982
Filing Date:
August 20, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/768; (IPC1-7): H01L21/88
Domestic Patent References:
| JPS5148287A | 1976-04-24 | |||
| JPS5210672A | 1977-01-27 |