Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59172784
Kind Code:
A
Abstract:
PURPOSE:To enable to obtain a wide light emitting and receiving band by a method wherein at least one of the P type and N type parts of a P-N junction is made to possess spacial fluctuation. CONSTITUTION:A point in the figure of composition in In1-yGayAsxP1-x corresponds to a composition, i.e., a pair of (x), (y). This InGaAsP does not form a stable uniform crystal over the entire region of its composition, but becomes unstable in thermodynamic manner at some temperature and some composition area, thus causing composition isolation. Then part of oblique lines 10 represents the unstable area. When the InGaAsp of the composition in this area, e.g., solubility gap is going to be formed by epitaxial growth, an ununiform mixed crystal of the assembly of microcrystals of various kind of composition having the composition in the purposed solubility gap as the average, but the composition out of this gap in more microscopic meaning can be obtained. The formation of a P-N junction by using the mixed crystal causes the simultaneous light emission by the microcrystals having different forbidden band widths, therefore the light emission of a wide light emitting band can be obtained.
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Inventors:
ISHITA TAKESHI
Application Number:
JP4744483A
Publication Date:
September 29, 1984
Filing Date:
March 22, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L33/16; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Uchihara Shin