PURPOSE: To obtain a semiconductor device which has high moisture resistance by connecting a bonding pad between internal circuits through a connecting layer.

CONSTITUTION: A bonding pad 31 shown by hatched lines is formed, for example, of an aluminum film. A wiring layer 32 is also formed of an aluminum film similar to the bonding pad, but separated discontinuously from the pad 31. Then, a connecting layer 6 is formed by N+ type or P+ type diffused layer on a semiconductor substrate. This layer 6 electrically connects through holes 5a, 5b with the pad 31 and the layer 32. A semiconductor substrate 8 is a wafer made of P type Si single crystal, and an insulating film 7 is made of SiO2 and has holes 5a, 5b. This the bonding pad is separated from the wiring layer, and connected by the connecting layer to eliminate the disconnection even if the bonding pad is corroded due to the invasion of moisture.