Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60140847
Kind Code:
A
Abstract:
PURPOSE:To obtain the titled device having an ''INA system'' electrode where the generation of poly-flower phenomenon is prevented by a method wherein a spacer layer made of an insulation film is interposed between a polycrystalline Si layer and an electrode made of a metallic layer. CONSTITUTION:After formation of an electrode contact window 2' in a field insulation film 2, an impurity of desired conductivity type is introduced to an Si active region 1 and heat-treated, thus forming a high impurity concentration region 1'. A polycrystalline Si layer 3 and an Si dioxide layer 5 are formed over the entire surface of a substrate by using the CVD method, and the Si dioxide layer 5 is removed only from the region corresponding to the window 2'. An aluminum layer 4 is evaporated over the entire surface of the substrate and then patterned into a desired flat shape, the layers 5 and 3 are etch-removed by using the same mask. At the electrode lead-out section thus formed, the aluminum electrode 4 is isolated from the Si layer 3 by the spacer layer 5 made of an insulation film; therefore, the generation of poly-flower phenomenon is surely prevented.
Inventors:
WATABE KIYOSHI
Application Number:
JP25003183A
Publication Date:
July 25, 1985
Filing Date:
December 28, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L23/522; H01L21/28; H01L21/768; H01L29/43; (IPC1-7): H01L21/88
Domestic Patent References:
| JPS56162829A | 1981-12-15 | |||
| JPS52124860A | 1977-10-20 | |||
| JPS5660030A | 1981-05-23 | |||
| JPS5544713A | 1980-03-29 | |||
| JPS5873135A | 1983-05-02 | |||
| JPS57176762A | 1982-10-30 |
Attorney, Agent or Firm:
Seiichi Samukawa