Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60148140
Kind Code:
A
Abstract:
PURPOSE:To enable to upgrade the withstand radiation force of a semiconductor device by a method wherein silicon atoms are introduced in the central region of the film thickness of an insulating film by an ion-implantation, etc., and an excess silicon region layer containing excessive silicon atoms is formed. CONSTITUTION:An excess silicon layer 103 containing excessive silicon atoms is formed in an insulating substance 102 having a stoichiometric coupling of silicon atoms in a silicon oxide film or a silicon nitriding film, etc., formed in a semiconductor substrate 101 and other atoms. In a condition that a voltage is being impressed in between an electrode 104 provided on the insulating substance 102 and the semiconductor substrate 101 using the electrode 104 as an anode, when an ionizing radiation 106 of gamma rays. X-rays, etc., is irradiated, pairs of an electron 107 and a hole 108, which generate in the insulating substance 102, recouple in the excess silicon layer 103 and a considerable number of the electron-hole pairs, which generate in the insulating substance 102, annihilate and go.
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Inventors:
SAKAMOTO MITSURU
Application Number:
JP433384A
Publication Date:
August 05, 1985
Filing Date:
January 13, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/265; H01L21/76; (IPC1-7): H01L21/265; H01L27/08
Domestic Patent References:
| JPS58131733A | 1983-08-05 |
Attorney, Agent or Firm:
Uchihara Shin