Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6052027
Kind Code:
A
Abstract:
PURPOSE:To obtain low interface density by forming a superlattice insulator film by the laminating of a substance having a lattice constant at an integral ratio to a lattice constant of a semiconductor substrate on the substrate. CONSTITUTION:A superlattice insulating film 4 having structure in which first insulators 2 and second insulators or semiconductors 3 are laminated alternately is applied on the surface of a semiconductor substrate 1, and a metallic thin-film 5 is applied on the insulating film 4. When P type GaAs is used as the semiconductor substrate 1, CaF2 is selected as the first insulator 2 and BaF2 as the second insulator, and each insulator is applied alternately through a molecular-beam epitaxial method at every 15Angstrom and 6Angstrom , or Ba0.26Ca0.74F2 is employed as the first insulator and GaAs or AlAs as the second semiconductor. Since the superlattice film by the laminating of a substance having a lattice constant at an integral ratio to a lattice constant of a substrate semiconductor is used, strains among the semiconductor and the insulating films can be absorbed.
Inventors:
OGAWA MASAKI
MIZUTANI TAKASHI
BABA TOSHIO
MIZUTANI TAKASHI
BABA TOSHIO
Application Number:
JP15981283A
Publication Date:
March 23, 1985
Filing Date:
August 31, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/812; H01L21/31; H01L21/314; H01L21/338; H01L29/778; H01L29/78; (IPC1-7): H01L29/78; H01L29/80
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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