PURPOSE: To enable the formation of resistors of better controllability, electrode wirings of lower resistance, large capacitance capacitors of smaller area, etc. with a high integration by using a tantalum series for the wiring of a semiconductor integrated circuit, a tantalum nitride film for a resistor, and a tantalum oxide film for a capacitor.

CONSTITUTION: Diffused layers 2, a field oxide film 3, a gate oxide film 4, and a poly Si gate electrode 5 are formed on the surface of an Si substrate 1, a tantalum-silicon film 6 for reduction in resistance of the electrode wiring being formed on the poly Si 5 and the diffused layers 2, and the resistor 7 of a tantalum nitride film, the capacitor of a tantalum oxide film 8, and the Si wiring 5 being then formed on the field oxide film 3. Such as integral construction of inactive elements such as an electrode made of a tantalum silicide, a resistor made of a tantalum nitride film, and a capacitor made of a tantalum oxide film on a semiconductor substrate enables to contrive higher controllability and the increase in performance.