Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6066444
Kind Code:
A
Abstract:
PURPOSE:To prevent the operation of a parasitic MOS transistor formed by a wiring on a field insulating film, and to remove leakage currents by forming an electrode at the same potential as a well or a substrate on the field insulating film in a semiconductor device having MOS structure. CONSTITUTION:An MOS transistor has a semiconductor 1, diffusion layer regions 2, gate electrodes 3, a field insulating film 4, a passivation film 5 and a wiring 6, and an electrode 8 is formed on the field insulating film 4, and brought to the same potential as a substrate 1 or a well. A parasitic MOS transistor is brought to an OFF state at all times, and the generation of leakage currents can be prevented. Junction withstanding voltage is not also reduced because a stopper is not used.
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Inventors:
FURUHATA TOMOYUKI
Application Number:
JP17500783A
Publication Date:
April 16, 1985
Filing Date:
September 21, 1983
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L29/78; H01L21/76; H01L21/768; H01L23/522; H01L29/06; H01L29/40; (IPC1-7): H01L21/88; H01L29/78
Attorney, Agent or Firm:
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