Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS61255073
Kind Code:
A
Abstract:
PURPOSE:To prevent the decline of photoelectric conversion efficiency by keeping the impurity concentration of Na and oxygen of the intrinsic or virtually intrinsic amorphous single crystal semiconductor doped with hydrogen or halogen element and arranged on a substrate under a predetermined value. CONSTITUTION:A transparent conductive film 33 and further a P-type silicon carbide (SixC1-x, 0cm-<3> or under.
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP9639185A
Publication Date:
November 12, 1986
Filing Date:
May 07, 1985
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/205; H01L31/04; H01L31/075; H01L31/18; H01L31/20; (IPC1-7): H01L21/205; H01L29/14; H01L31/04
Domestic Patent References:
| JPS55157276A | 1980-12-06 | |||
| JPS5638873A | 1981-04-14 |
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