Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6191946
Kind Code:
A
Abstract:
PURPOSE:To contrive improvement in the operational margin of a unit gate cell by a method wherein the ratio of the current running on a driving circuit part is made smaller than the current running on the load circuit part of the unit gate cell connected to the part relatively isolated from the supply side of a reference potential wiring. CONSTITUTION:Power source wiring circumferential parts 3a and 4a formed on the circumference of the semiconductor chip connected to a power source pad and a plurality of unit gate cells 1 and 2 provided in column form with the row or column parts 3b and 4b connected to said circumferential part are prepared. A driving circuit part 9 and a load circuit part 8 are provided on the unit gate cells 1 and 2 respectively, the unit gate cells 1 and 2 are divided into the first group and the second group, and the current ratio of the current running on the driving circuit of the second group of unit gate cell is made smaller than the current ratio of the current running on the load circuit part 8 of the first group of unit gate cell.
Inventors:
NISHIUCHI KOICHI
Application Number:
JP21360284A
Publication Date:
May 10, 1986
Filing Date:
October 12, 1984
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/822; H01L21/82; H01L21/8234; H01L27/04; H01L27/088; H01L27/118; (IPC1-7): H01L27/04; H01L27/08
Attorney, Agent or Firm:
Sadaichi Igita