PURPOSE: To form a peripheral circuit with a small occupied area by supplying a load current via a conduction channel type MISFET operated at a high current amplification factor without any back gate bias supplied.
CONSTITUTION: In outputting the 1st power voltage VPP fed to the input terminal 1 from an output terminal 3, a low voltage is fed to a MISFET Q3 from the 3rd signal terminal 6, the MISFET Q3 is conducted and the input terminal 1 and the output terminal 3 are conducted electrically. A high voltage boosted by a charge pump or the like from the 1st signal terminal 4 is fed to a MISFET Q1, which is conducted. A low voltage is fed to a MISFET Q3 from the 2nd signal terminal 5, the FET Q2 is conducted and a base electrode of the FET Q3 goes to a potential equal to the 1st power voltage VPP. Since the MISFET Q3 is of P-channel type, no back gate bias is fed and the FET Q3 is operated at a high current amplification factor, then the occupied area of the MISFET Q3 is very small.