PURPOSE: To realize low resistance values of wirings and electrodes and high speed operation of a semiconductor device by a method wherein low resistance metal is solidly applied to the wirings and electrodes composed of heat resistant metal films.

CONSTITUTION: A silicon oxide film 4 is formed over the whole surface of a substrate 1 to cover the substrate 1 and a gate electrode 3 completely. Further, a photoresist film 5 is applied to it as an organic film to cover the oxide film 4 completely and then the surface of the photoresist film 5 is leveled and the photoresist film 5 and the oxide film 4 are etched. Then a gold plating film 6 is selectively formed on the gate electrode 3 by using the gate electrode 3 as a feeding path. The photoresist film 5 is removed and further the silicon oxide film 4 is left only on both sides of the gate electrode 3 by anisotropic etching. High impurity concentration layers 7 and 7 are made to grow on the substrate 1 on both sides of the gate electrode 3 and further ohmic metals 8 and 8 are formed on the layers 7 and 7. With this constitution, the resistance of the gate electrode 3 can be reduced and the operation speed can be improved by the low resistance property of gold.