PURPOSE: To sufficiently enhance reverse breakdown strength thereby to increase the area of electrodes on a pellet and to improve the performance of an element by forming a barrier wall for an insulating layer for protecting the surface of a junction of an insulator of an Si compound, such as an SiO2.
CONSTITUTION: A P-type layer 12 and an N- type layer 13 are superposed on an Mo electrode 11, an N+ type layer 14 is formed partly on the surface of the layer 13, and an aluminum electrode 15 is attached. A barrier wall 16 of SiO2 film is formed on the periphery of the electrode 15. A covering layer 17 on the exposed P-N junction surface beveled by the wall 16 is prevented from flowing to the electrode 15. A depleted layer is extended to the position of a broken line (b) by the insulating wall 16, the allowable breakdown strength is increased, the wall 16 performs a role of protecting the surface of an element, thereby remarkably improving the performance of the element.
HOKODATE KIMINOBU
IGARASHI YUKIO
NAKAZAWA SHIGEO
