Title:
半導体装置、電気泳動表示装置、表示モジュール、及び電子機器
Document Type and Number:
Japanese Patent JP5645996
Kind Code:
B2
Abstract:
The invention is directed to a semiconductor device comprising a first insulating film over a substrate, the first insulating film comprising silicon nitride; a second insulating film over the first insulating film, the second insulating film comprising silicon oxide; and an oxide semiconductor film over the second insulating film, wherein the oxide semiconductor film comprises indium and zinc.
Inventors:
秋元 健吾
本田 達也
曽根 寛人
本田 達也
曽根 寛人
Application Number:
JP2013083474A
Publication Date:
December 24, 2014
Filing Date:
April 12, 2013
Export Citation:
Assignee:
株式会社半導体エネルギー研究所
International Classes:
H01L29/786; G02F1/1368; G02F1/167; H01L21/20; H01L21/28; H01L21/336; H01L51/50
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