Title:
半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
Document Type and Number:
Japanese Patent JP7263178
Kind Code:
B2
Abstract:
A semiconductor device of an embodiment includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and the silicon carbide layer having a first plane and a second plane, the silicon carbide layer including a first trench, p-type first silicon carbide regions and n-type second silicon carbide regions alternately disposed, a p-type third silicon carbide region between the second silicon carbide region and the first plane, and an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and a p-type fifth silicon carbide region between the first silicon carbide region and the first trench, a gate electrode in the first trench, and a gate insulating layer. The length of the first silicon carbide region perpendicular to the first plane is longer than a depth of the first trench.
Inventors:
Shinya Kyogoku
Joji Nishio
Ryosuke Iijima
Joji Nishio
Ryosuke Iijima
Application Number:
JP2019143400A
Publication Date:
April 24, 2023
Filing Date:
August 02, 2019
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12
Domestic Patent References:
| JP2017059570A | ||||
| JP2014130986A | ||||
| JP2017228570A | ||||
| JP2015060859A | ||||
| JP2006310621A | ||||
| JP2018041853A | ||||
| JP2008117826A | ||||
| JP2018107167A |
Foreign References:
| WO2017179377A1 | ||||
| WO2020110514A1 | ||||
| US20210183995 | ||||
| US20190074360 | ||||
| US20160225854 | ||||
| US20140187004 | ||||
| US20060244054 | ||||
| US20170077289 | ||||
| US20180069115 | ||||
| US20080135929 | ||||
| US20170365709 | ||||
| US20180182884 |
Attorney, Agent or Firm:
Torushin Ikegami
Akira Sudo
Masahiro Takashita
Akira Sudo
Masahiro Takashita
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