Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022075793
Kind Code:
A
Abstract:
To provide a semiconductor device constituting a solid-state image pickup device of a surface irradiation type and capable of suppressing the occurrence of a crystal detect in a light-receiving unit without spoiling desired characteristics, and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device includes: a light-receiving unit provided inside a semiconductor layer having a first conductivity type and having a second conductivity type different from the first conductivity type; a buffer layer provided on a light-incident side of the light-receiving unit and composed of an amorphous silicon; an insulation film provided on a light-incident side of a region other than a formation region of the light-receiving unit of the semiconductor layer; and a light-condensing unit provided on a light-incident side of the buffer layer and having a higher refractive index than the insulation film.SELECTED DRAWING: Figure 4
Inventors:
SHIBATA HIROSHI
Application Number:
JP2022037213A
Publication Date:
May 18, 2022
Filing Date:
March 10, 2022
Export Citation:
Assignee:
LAPIS SEMICONDUCTOR CO LTD
International Classes:
H01L27/146; H01L31/02; H01L31/10
Domestic Patent References:
| JP2008091800A | 2008-04-17 | |||
| JP2012204690A | 2012-10-22 | |||
| JP2008027980A | 2008-02-07 | |||
| JP2010003928A | 2010-01-07 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazuho
Hiroshi Fukuda
Kato Kazuho
Hiroshi Fukuda