Title:
半導体装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6540461
Kind Code:
B2
Abstract:
A semiconductor apparatus includes an electron transit layer formed of a nitride semiconductor over a substrate; an electron supply layer formed of a nitride semiconductor including In over the electron transit layer; a cap layer formed of a nitride semiconductor over the electron supply layer; an insulation film formed over the cap layer; a source electrode and a drain electrode formed over the electron transit layer or the electron supply layer; and a gate electrode formed over the cap layer. A quantum well is formed by the cap layer.
Inventors:
Gozo Makiyama
Application Number:
JP2015215088A
Publication Date:
July 10, 2019
Filing Date:
October 30, 2015
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L29/06; H01L29/778; H01L29/812
Domestic Patent References:
| JP2015073073A | ||||
| JP2013098556A | ||||
| JP2010010489A |
Foreign References:
| US20150279722 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Takao Kato
Tadahiko Ito
Takao Kato